Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure

A semiconductor buffer structure comprising:

• a silicon substrate;
• and
• a buffer layer on the silicon substrate, the buffer layer including a first layer, a second layer on the first layer, and a third layer on the second layer,
• wherein the first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate,
• wherein the second layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant distribution LP2d that increases along a thickness direction of the second layer, and
• wherein the third layer includes AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and has a lattice constant LP3 that is smaller than a lattice constant average LP2a of the second layer.

A semiconductor device comprising:

• a silicon substrate;
• a buffer layer on the silicon substrate, the buffer layer including a first layer, a second layer on the first layer, and a third layer on the second layer, the first layer including AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and having a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate, the second layer including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP2 that is greater than the lattice constant LP1 and smaller than the lattice constant LP0, and the third layer including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP3 that is greater than the lattice constant LP1 and smaller than the lattice constant LP2;
• and
• a nitride semiconductor layer on the buffer layer.

A semiconductor device comprising:

• a silicon substrate;
• a buffer layer on the silicon substrate, the buffer layer including a first layer, a second layer on the first layer, and a third layer on the second layer, the first layer including AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and having a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate, the second layer including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant distribution LP2d that increases along a thickness direction of the second layer, and the third layer including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP3 that is smaller than a lattice constant average LP2a of the second layer;
• and
• a nitride semiconductor layer on the buffer layer.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a silicon substrate;
• forming on the silicon substrate a buffer layer comprising
• a first layer including AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and having a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate,
• a second layer that is formed on the first layer, including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP2 that is greater than the lattice constant LP1 and smaller than the lattice constant LP0;
• and
• a third layer that is formed on the second layer, including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP3 that is greater than the lattice constant LP1 and smaller than the lattice constant LP2;
• and
• forming a nitride semiconductor layer on the buffer layer.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a silicon substrate;
• forming on the silicon substrate a buffer layer comprising
• a first layer including AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and having a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate,
• a second layer that is formed on the first layer, including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant distribution LP2d that increases along a thickness direction of the second layer, and
• a third layer that is formed on the second layer, including AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) and having a lattice constant LP3 that is smaller than a lattice constant average LP2a of the second layer;
• and
• forming a nitride semiconductor layer on the buffer layer.