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US 8,946,769 B2Granted
Lateral devices containing permanent charge
AssigneeMaxPower Semiconductor, Inc.
InventorsMohamed N. Darwish, Amit Paul
Life of this patent
Estimating the term…
Abstract
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
Claims20
A lateral semiconductor device comprising:
- a first-conductivity-type source region;
- a second-conductivity-type body region interposed between said source region and a semiconductor drift region;
- said drift region being laterally interposed between said body region and a first-conductivity-type drain region;
- and
- permanent charge, embedded in at least one insulating region which vertically adjoins said drift region, which has a polarity which tends to deplete a layer of said drift region in proximity to said insulating region.
2 more elements
A lateral semiconductor device, comprising:
- a second-conductivity-type body region interposed between a first-conductivity-type source region and a drift region, said drift region being laterally interposed between said body region and a first-conductivity-type drain region;
- a surface region within said drift region;
- and
- permanent charge, embedded in at least one insulating region which vertically adjoins said drift region, which has a polarity which tends to invert said surface region in proximity to said insulating region.
1 more element
A lateral semiconductor device, comprising:
- a second-conductivity-type body region interposed between a first-conductivity-type source region and a drift region, said drift region being laterally interposed between said body region and a first-conductivity-type drain region;
- a surface region within said drift region;
- permanent charge, embedded in an insulation region which vertically adjoins said surface region, which has a polarity which tends to invert adjacent portions of said surface region;
- and
- a trench gate;
- wherein said source region is laterally interposed between said trench gate and said drain region.
3 more elements
Dependencies are inferred from the claim text.