Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a first conductivity type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate;
• a first electrode disposed on a portion of the first conductivity-type semiconductor layer;
• a current diffusion layer disposed on the second conductivity-type semiconductor layer and including an opening;
• a second electrode disposed on a portion of the current diffusion layer and an exposed portion defined by the opening of the current diffusion layer;
• and
• a reflective layer interposed between the second electrode and the second conductivity-type semiconductor layer and spaced apart from the current diffusion layer,
• wherein the portion of the current diffusion layer is near the opening.