Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a light emitting unit including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, the first semiconductor layer having a first conductivity type and having a first major surface and a second major surface, the first major surface having a first portion and a second portion, the second major surface opposed the first major surface and having a third portion and a fourth portion provided around the third portion, the light emitting layer provided on the first portion, the second semiconductor layer having a second conductivity type and provided on the light emitting layer;
• a first conductive pillar provided on the second portion, extending along a first direction perpendicular to the first major surface, having a side face extending along the first direction, and electrically connected to the first semiconductor layer;
• a second conductive pillar provided on the second semiconductor layer, extending along the first direction, having a side face extending along the first direction, and electrically connected to the second semiconductor layer;
• a sealing unit covering the side face of the first conductive pillar and the side face of the second conductive pillar;
• a translucent layer having translucency and provided on the fourth portion;
• and
• a wavelength conversion layer provided on the third portion and on the translucent layer, absorbing at least a part of a first light emitted from the light emitting layer, and emitting a second light having a peak wavelength different from the peak wavelength of the first light.