Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate

A vertically-structured semiconductor light emitting device comprising:

• a light emitting structure comprising a Group III-V nitride-based semiconductor, and a first contact electrode on an upper part of the Group III-V nitride-based semiconductor, and a second contact electrode, an insulating thin film, a first conductive thin film, and a second conductive thin film on a bottom part of the Group III-V nitride-based semiconductor, and a passivation thin film on a side of the Group III-V nitride-based semiconductor;
• a metal foil bonded at a bottom part of the second conductive thin film by a first bonding layer;
• and
• a thick metal film bonded at a bottom part of the metal foil by a second bonding layer,
• wherein a thickness of the metal foil is equal to or greater than a thickness of the thick metal film.

A vertically-structured semiconductor light emitting device comprising:

• a light emitting structure comprising a Group III-V nitride-based semiconductor and a first contact electrode on an upper part of the Group III-V nitride-based semiconductor, and a second contact electrode, an insulating thin film, a first conductive thin film, a second conductive thin film and a first thick metal film on a bottom part of the Group III-V nitride-based semiconductor, and a passivation thin film on a side of the Group III-V nitride-based semiconductor;
• and
• a metal foil bonded at a bottom of the first thick metal film by a first bonding layer,
• wherein a thickness of the metal foil is equal to or greater than a thickness of the first thick metal film.