Semiconductor package with through silicon vias

A semiconductor device package, comprising:

• at least three light-emitting devices (LEDs), wherein the at least three LEDs emit light with more than one wavelengths;
• a substrate with one or more through silicon plugs extending from a first surface of the substrate to a second surface opposite to the first surface, wherein sidewalls of the one or more through silicon plugs are lined with an isolation layer and a first copper barrier layer, and wherein the one or more through silicon plugs are filled with a first copper layer, wherein the one or more through silicon plugs have first ends and second ends, and wherein the second ends have the first copper layer extended above the first surface of the substrate and the first ends have the first copper layer flushed with the second surface of the substrate;
• a second copper layer formed on the first ends of through silicon plugs, wherein the second copper layer defines an area to receive the at least three LEDs, wherein there is a second copper barrier layer separates the first copper layer on the first ends of the one or more through silicon plugs and the second copper layers, wherein the at least three LEDs are disposed on the area defined by the second copper layer;
• and wherein one of the through silicon plugs is shaped as a trench surrounding the at least three LEDs and the through silicon plugs disposed under the at least three LEDs, and wherein the first barrier layer in the trench protects against copper diffusion from through silicon plugs encircled by the trench.

A semiconductor package comprising:

• a first substrate having a plurality of through-silicon plugs having first ends buried in the first substrate and bodies extending from a first side toward a second side of the first substrate, wherein the through-silicon plugs are lined with an isolation layer and a first copper barrier layer, and wherein the through-silicon plugs are filled with a first copper layer, and wherein the first substrate contains electrical circuitry therein, the electrical circuitry including at least one of:
• transistors, capacitors, resistors, diodes, and fuses;
• a plurality of areas of the first substrate devoid of silicon, the areas aligned with the first ends of the plurality of the through-silicon plugs buried in the first substrate, the areas including a second copper layer and a second copper barrier layer deposited on the first ends of through-silicon plugs, wherein the second copper layer includes a first conductive pad and a second conductive pad spaced apart from the first conductive pad;
• a light-emitting diode (LED) chip directly bonded to the first conductive pad and wire bonded to the second conductive pad of the second copper layer, wherein the LED chip has a smaller lateral dimension than the second copper layer, and wherein a p-side of the LED chip is bonded to the first conductive pad, and wherein an n-side of the LED chip is wire bonded to the second conductive pad;
• and
• a lens housing the semiconductor chip and the first conductive pad or the second conductive pad therein, wherein the lens is free of being circumferentially confined, and wherein the first and second conductive pads are disposed entirely within the lens housing.