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US 8,946,739 B2Granted
Process to fabricate integrated MWIR emitter
AssigneeLateral Research Limited Liability Company
InventorDaniel Carothers
Life of this patent
Estimating the term…
Abstract
A device for medium wavelength infrared emission and a method for the manufacture thereof is provided. The device has a semiconductor substrate; a passive hermetic barrier disposed upon the substrate, and an emitter element disposed within said hermetic barrier; and a mirror.
Claims16
A method comprising:
- etching a semiconductive substrate to form a well;
- after etching the semiconductor substrate to form the well, applying a barrier layer on the semiconductive substrate;
- applying a mold layer on the barrier layer;
- etching the mold layer to at least partially expose the barrier layer and to create at least one emitter mold;
- depositing an emitter material in the emitter mold and on the barrier layer exposed by said etching the mold layer;
- and
- removing the mold layer.
4 more elements
A method comprising:
- disposing a first insulation layer over a semiconductive substrate;
- disposing an emitter material over a first portion of the first insulation layer;
- removing a second portion of the first insulation layer to expose a portion of the semiconductive substrate;
- creating a well in the portion of the semiconductive substrate exposed by said removing a second portion of the first insulation layer;
- disposing a second insulation layer over the emitter material and the well;
- disposing a reflective layer over at least a portion of the second insulation layer;
- and
- creating at least one via opening in the second insulation layer to expose the emitter material.
5 more elements
A method comprising:
- disposing a first insulation layer over a semiconductive substrate;
- disposing an emitter material over a first portion of the first insulation layer;
- removing a second portion of the first insulation layer to expose a portion of the semiconductive substrate;
- disposing a second insulation layer over the emitter material;
- disposing a reflective layer over at least a portion of the second insulation layer;
- and
- creating at least one via opening in the second insulation layer to expose the emitter material.
4 more elements
A method comprising:
- etching a well in a semiconductive substrate;
- after etching the well in the semiconductor substrate, disposing a first insulation layer over the semiconductive substrate;
- disposing an emitter material over a first portion of the first insulation layer;
- disposing a mold layer over the first insulation layer prior to said disposing an emitter material;
- patterning the mold layer to expose the first portion of the first insulation layer, wherein the emitter material is disposed over the first portion of the first insulation layer exposed by said patterning of the mold layer;
- and
- removing a second portion of the first insulation layer to expose a portion of the semiconductive substrate.
4 more elements
Dependencies are inferred from the claim text.