Light emitting diode and manufacturing method thereof

A light emitting diode (LED) comprising:

• a substrate having a first surface with a patterning structure formed on the first surface, the patterning structure comprising a plurality of projections;
• a buffer layer arranged on the first surface of the substrate;
• and
• an epitaxial structure arranged on the buffer layer, the epitaxial structure comprising a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence, the first semiconductor layer having a second surface attached to the active layer;
• wherein the first semiconductor layer is an N-type nitride layer and a distance between a peak of each of the projections and the second surface of the first semiconductor layer is in a range from 0.5 to 2.5 μm, each projection comprises a convex arc surface on which the peak is formed, a diameter of the arc surface is 3 μm.