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US 8,946,736 B2Granted
Optoelectronic device and method for manufacturing the same
AssigneeEpistar Corporation
InventorsWei-Chih Peng, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
Life of this patent
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Abstract
An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Claims20
An optoelectronic device comprising:
- a first layer having an upper surface and a lower surface;
- an upper hollow component being inside the first layer;
- a lower hollow component being closer to the lower surface than the upper hollow component;
- rods formed on the first layer;
- and
- an active layer formed on the first layer.
3 more elements
An optoelectronic device comprising:
- a first layer having an upper surface and a lower surface;
- an upper hollow component being inside the first layer;
- a lower hollow component being closer to the lower surface than the upper hollow component;
- a layer formed on the first layer and having hollow components;
- and
- an active layer formed on the first layer.
3 more elements
An optoelectronic device comprising:
- a first layer having an upper surface and a lower surface;
- an upper hollow component being inside the first layer;
- a lower hollow component being closer to the lower surface than the upper hollow component, wherein a refractive index of the upper hollow component or a refractive index of the lower hollow component is lower than that of the first layer;
- and
- an active layer formed on the first layer.
2 more elements
Dependencies are inferred from the claim text.