Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

A thin film transistor device comprising:

• a first thin film transistor element and a second thin film transistor element that are positioned adjacent to each other with a gap therebetween, wherein
• each of the first thin film transistor element and the second thin film transistor element comprises:
• a gate electrode;
• an insulating layer disposed on the gate electrode;
• a source electrode and a drain electrode disposed on the insulating layer with a gap therebetween;
• and
• a semiconductor layer that is disposed on the source electrode and the drain electrode to cover the source electrode and the drain electrode and fill the gap between the source electrode and the drain electrode, and that is in contact with the source electrode and the drain electrode, wherein
• the thin film transistor device further comprises partition walls that are disposed on the insulating layer and partition the semiconductor layer of the first thin film transistor element from the semiconductor layer of the second thin film transistor element, the partition walls having liquid-repellant surfaces and defining a first aperture, a second aperture, and a third aperture,
• the first aperture surrounds at least a part of each of the source electrode and the drain electrode of the first thin film transistor element,
• the second aperture is adjacent to the first aperture and surrounds at least a part of each of the source electrode and the drain electrode of the second thin film transistor element,
• the third aperture is adjacent to the first aperture with a gap therebetween and is positioned in a direction, from the first aperture, differing from a direction in which the second aperture is positioned with respect to the first aperture,
• an area of the thin film transistor device in the third aperture does not include a semiconductor layer and does not function as a channel portion of the thin film transistor device,
• a bottom portion of each of the first and second apertures includes a source electrode portion, which is a bottom portion of the source electrode, and a drain electrode portion, which is a bottom portion of the drain electrode,
• in a plan view, at the bottom portion of the first aperture, a center of a total of areas of the source electrode portion and the drain electrode portion is offset from a center of an area of the bottom portion of the first aperture in a direction differing from the direction in which the third aperture is positioned with respect to the first aperture, and
• in the plan view, at the bottom portion of one of the first and second apertures, a center of a total of areas of the source electrode portion and the drain electrode portion is offset from a center of an area of the bottom portion of the one of the first and second apertures in a direction differing from a direction in which the other one of the first and second apertures is positioned with respect to the one of the first and second apertures.