Light emitting diode
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsZhen-Dong Zhu, Qun-Qing Li, Shou-Shan Fan
Life of this patent
Estimating the term…
Abstract
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The second semiconductor layer is covered with stepped three-dimensional nano-structures in a particular shape, which act to reabsorb wide-angle incident light and re-emit the light at narrower angles of incidence, to increase the light-giving properties of the light emitting diode.
Claims12
A light emitting diode, comprising:
- a substrate;
- a first semiconductor layer;
- an active layer;
- a second semiconductor layer;
- a first electrode electrically connected to the first semiconductor layer;
- and
- a second electrode electrically connected to the second semiconductor layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate, the second semiconductor layer has a plurality of three-dimensional nano-structures, each of the plurality of three-dimensional nano-structures has a stepped structure comprising at least two steps, each of the plurality of three-dimensional nano-structures defines a space, each of the plurality of three-dimensional nano-structures comprises a continuous and closed side wall and a bottom wall connected with the continuous and closed side wall, and the space is surrounded by the continuous and closed side wall and the bottom wall.
Dependencies are inferred from the claim text.