Semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorKyu Sang Kim
Life of this patent
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Abstract
A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
Claims18
A semiconductor light emitting device comprising:
- a light emission structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
- and
- a wavelength conversion layer disposed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a plurality of voids therein,
- wherein the plurality of voids are disposed in the interior of the wavelength conversion layer and are separately and regularly arranged to form certain patterns, and
- wherein the patterns comprise a plurality of voids having a rectangular parallelepiped shape and separately disposed in one direction and a plurality of voids having a rectangular shape and separately disposed in another direction, the voids forming lattice patterns.
A semiconductor light emitting device comprising:
- a substrate including a recess disposed on one surface thereof;
- a light emission structure disposed on an other surface of the substrate on which the recess is not disposed, and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
- and
- a wavelength conversion layer disposed in the recess of the substrate, made of a light-transmissive material including phosphor particles or quantum dots, and having voids disposed in an interior of the wavelength conversion layer so as to be completely enclosed by the wavelength conversion layer,
- wherein the plurality of voids are disposed in the interior of the wavelength conversion layer and are separately and regularly arranged to form certain patterns, and
- the patterns comprise a plurality of voids having a rectangular parallelepiped shape and separately disposed in one direction and a plurality of voids having a rectangular shape and separately disposed in another direction, the voids forming lattice patterns.
Dependencies are inferred from the claim text.