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US 8,946,714 B2Granted
Semiconductor device and electronic apparatus including multilayer insulation film
AssigneeSony Corporation
InventorMasanori Nishiyama
Life of this patent
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Abstract
A semiconductor device includes: a transistor including an oxide semiconductor film; a first insulating film covering the oxide semiconductor film and including a first resin material; and a second insulating film including a second resin material that has polarity different from polarity of the first resin material, the second insulating film being laminated on the first insulating film.
Claims18
A semiconductor device comprising:
- a transistor including an oxide semiconductor film;
- a high resistance film formed on the transistor;
- a first insulating film formed on the high resistance film and covering the oxide semiconductor film, and the first insulating film including a first resin material;
- a second insulating film including a second resin material, the second insulating film being laminated on the first insulating film;
- and
- a third insulating film including a third resin material, the third insulating film being laminated on the second insulating film,
- wherein a polarity of the second resin material is greater than a polarity of the third resin material, and the polarity of the third resin material is greater than a polarity of the first resin material.
4 more elements
An electronic apparatus with a display unit, the display unit comprising:
- a display device;
- a transistor driving the display device and including an oxide semiconductor film;
- a high resistance film formed on the transistor;
- a first insulating film formed on the high resistance film and covering the oxide semiconductor film, and the first insulating film including a first resin material;
- a second insulating film including a second resin material, the second insulating film being laminated on the first insulating film;
- and
- a third insulating film including a third resin material, the third insulating film being laminated on the second insulating film,
- wherein a polarity of the second resin material is greater than a polarity of the third resin material, and the polarity of the third resin material is greater than a polarity of the first resin material.
5 more elements
A semiconductor device comprising:
- a transistor including an oxide semiconductor film;
- a high resistance film formed on the transistor;
- an insulating film covering the oxide semiconductor film and including
- a first resin layer including a first resin material, and
- a second resin layer including a second resin material, the second resin layer being formed on the first resin layer;
- and
- a surface modification layer covering the insulating film,
- wherein a hydrophobicity of the second resin material is greater than a hydrophobicity of the surface modification layer, and the hydrophobicity of the surface modification layer is greater than a hydrophobicity of the first resin material.
5 more elements
Dependencies are inferred from the claim text.