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US 8,946,692 B2Granted
Graphene (multilayer) boron nitride heteroepitaxy for electronic device applications
AssigneeUniversity of North Texas
InventorJeffry A Kelber
Life of this patent
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Abstract
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
Claims9
A composition of matter, comprising:
- an ordered film of boron nitride (BN) prepared by atomic layer deposition comprised of multiple layers and having a thickness greater than one atomic layer of hexagonal boron nitride, said ordered film of BN exhibiting at least one major surface;
- and
- a layer of graphene formed on said major surface by chemical vapor deposition.
Dependencies are inferred from the claim text.