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US 8,946,680 B2Granted
TFET with nanowire source
AssigneeInternational Business Machines Corporation
InventorsSarunya Bangsaruntip, Isaac Lauer, Amlan Majumdar, Jeffrey Sleight
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Abstract
A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.
Claims9
A tunnel field effect transistor (TFET), comprising:
- a source region, the source region comprising a first portion of a nanowire;
- a channel region, the channel region comprising a second portion of the nanowire;
- a drain region, the drain region comprising a first portion of a silicon pad, the silicon pad being located adjacent to the channel region;
- and
- a gate configured such that the gate surrounds the channel region and at least a second portion of the silicon pad and such that the gate covers a surface of a third portion of the silicon pad and at least a portion of a surface of the drain region.
2 more elements
Dependencies are inferred from the claim text.