Light emitting diode and method for manufacturing the same
AssigneeLextar Electronics Corporation
InventorsChang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
Life of this patent
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Abstract
A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.
Claims11
A light emitting diode, comprising:
- a substrate;
- a first-type semiconductor layer disposed over the substrate;
- a nanorod layer formed on the first-type semiconductor layer, the nanorod layer including a plurality of nanorods and each of the nanorods including a quantum well structure and a second-type semiconductor layer, wherein the quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure;
- and
- a transparent planar layer filled between the nanorods, wherein a surface of the second-type semiconductor layer is exposed out of the transparent planar layer;
- wherein the first-type semiconductor layer, the nanorod layer and the transparent planar layer constitute a trapezoid sidewall structure.
Dependencies are inferred from the claim text.