Resistive switching device structure with improved data retention for non-volatile memory device and method

A non-volatile memory device structure comprising:

• a bottom electrode comprising a metal material extending in a first direction;
• a contact layer comprising a doped silicon-containing material disposed above the bottom electrode;
• a top electrode comprising a metal material extending in a second direction, the first direction being approximately orthogonal to the second direction;
• a resistive switching material comprising an amorphous silicon-containing material disposed above the contact layer and disposed in an intersection region between the bottom electrode and the top electrode, wherein the resistive switching material is characterized by at least a first resistance upon application of a first voltage across the top electrode and bottom electrode, wherein the first resistance is dependent on at least a first portion of a conductor structure formed in a portion of the resistive switching material, and wherein the conductor structure is formed from the metal material of the top electrode;
• and
• a layer of material disposed above the contact layer and below the resistive switching material, wherein the layer of material is configured to allow conductor species from the conductor to tunnel to the bottom electrode when the first voltage is applied and configured to inhibit conductor species from the conductor structure from migrating away from the bottom electrode when a second voltage having an amplitude less than the first voltage is applied across the top electrode and the bottom electrode.