Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element

A resistance changing element comprising:

• a first electrode and a second electrode;
• and
• an ion conducting layer that is formed between said first electrode and said second electrode and that contains at least oxygen and carbon,
• wherein said ion conducting layer is a porous film that contains at least silicon as well as said oxygen and said carbon:
• said ion conducting layer is a film that contains a six-membered ring-shaped siloxane structure or an eight-membered ring-shaped siloxane structure;
• said ion conducting layer is a film that contains at least an unsaturated hydrocarbon group;
• said ion conducting layer has a relative permittivity of 2.5 to 3.5 and a single peak distribution of hole diameters;
• said ion conducting layer includes at least an organic silica compound;
• and
• said organic silica compound has a structure expressed by any one of Chemical Formulas that follow and R1 is a vinyl group and R2 is anyone from among hydrogen, methyl group, ethyl group, propyl group and isopropyl group;