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US 8,946,671 B2Granted
Mask read only memory containing diodes and method of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsSheng-Chih Lai, Hsiang-Lan Lung, Yi-Chou Chen
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Abstract
A mask read only memory containing diodes and method of manufacturing the same. The mask read only memory is a high-density three dimensional array formed by stacking a plurality of diode layers and the logic “0” or “1” is defined by whether there is a dielectric layer on the diode.
Claims12
A mask read only memory containing diodes, comprising:
- a semiconductor substrate;
- an insulating layer on the semiconductor substrate;
- at least two memory cell layers stacked on the insulating layer, each memory cell layer including:
- a first conductive line along a first direction on the insulating layer;
- a vertical diode on the first conductive line;
- a dielectric layer on the vertical diode;
- and
- a second conductive line along a second direction on the dielectric layer and the vertical diode,
- wherein the first direction is perpendicular to the second direction and a separating layer is disposed between two stacked adjacent memory cell layers.
6 more elements
A mask read only memory containing diodes, comprising:
- a semiconductor substrate;
- an insulating layer on the semiconductor substrate;
- n diode layers stacked on the insulating layer, wherein n is an integer equal to or greater than 2 and each diode layer comprises a plurality of vertical diodes and a plurality of dielectric layers on part of the diodes;
- n parallel first conductive layers;
- n parallel second conductive layers, wherein each diode layer and each dielectric layer are disposed between one of the first conductive layer and one of the second conductive layer;
- and
- n-1 separating layers disposed between one of the first conductive layers and one of the second conductive layers which are adjacent and stacked.
4 more elements
A mask read only memory containing diodes, comprising:
- a semiconductor substrate;
- an insulating layer on the semiconductor substrate;
- a plurality of first conductive lines along a first direction on the insulating layer;
- first and second vertical diodes on the first conductive lines;
- a plurality of dielectric layers directly on the first vertical diodes;
- a plurality of second conductive lines along a second direction directly on the dielectric layers and the second vertical diodes, wherein the first direction is perpendicular to the second direction;
- and
- a separating layer disposed on the second conductive line.
5 more elements
Dependencies are inferred from the claim text.