Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring on a semiconductor substrate;
• forming a stack film on the first wiring, the stack film including at least a lower electrode film of a resistive change element and a metal oxide to form a resistive change element film;
• patterning the stack film into a predetermined shape;
• forming an interlayer insulation film on a whole surface;
• forming a wiring trench in the interlayer insulation film, the wiring trench being to form a second wiring, and a pilot hole for a plug in a bottom of the wiring trench, the pilot hole exposing an upper surface of the resistive change element film that is spaced apart from a side surface of the resistive change element film;
• forming a metal film that is to form an upper electrode of the resistive change element to a film thickness with which the pilot hole for a plug is not filled;
• forming a metal layer that is to form a second wiring on the metal film that is to form the upper electrode of the resistive change element;
• and
• planarizing the metal film that is to form the upper electrode of the resistive change element and the metal layer that is to form the second wiring until a surface of the interlayer insulation film is exposed,
• wherein the metal layer that constitutes the second wiring comprises a barrier metal and a copper film.

A semiconductor device comprising a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction, with an interlayer insulation film being interposed on a semiconductor substrate,

• wherein the resistive change element comprises:
• an upper electrode electrically connected to the second wiring;
• a lower electrode electrically connected to the first wiring;
• and
• a resistive change element film interposed between the upper and lower electrodes, the resistive change element film being made of a metal oxide,
• wherein the second wiring comprises a plug having a rectangular shape as an entire vertical section,
• wherein the plug comprises a metal layer that constitutes the second wiring that is buried inside the upper electrode of the resistive change element, which is buried while covering an outermost side surface and a bottom surface of the plug,
• wherein the upper electrode covering the bottom of the plug is in contact with an upper surface of the resistive change element film that is spaced apart from a side surface of the resistive change element film, and
• wherein the metal layer that constitutes the second wiring comprises a barrier metal and a copper film.

A semiconductor device comprising a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction, with an interlayer insulation film being interposed on a semiconductor substrate,

• wherein the resistive change element comprises:
• an upper electrode electrically connected to the second wiring;
• a lower electrode electrically connected to the first wiring;
• and
• a resistive change element film interposed between the upper and lower electrodes, the resistive change element film being made of a metal oxide,
• wherein the second wiring comprises a plug having a rectangular shape as an entire vertical section,
• wherein the plug comprises a metal layer that constitutes the second wiring that is buried inside the upper electrode of the resistive change element, which is buried while covering an outermost side surface and a bottom surface of the plug,
• wherein the upper electrode covering the bottom of the plug is in contact with an upper surface of the resistive change element film that is spaced apart from a side surface of the resistive change element film,
• wherein the first wiring comprises a barrier metal and a copper film as a metal film, and the barrier layer is interposed between the copper film and the lower electrode.