Barrier structure for a silver based RRAM and method

A device structure for a resistive switching device;

• comprising:
• a substrate having a surface region;
• a first dielectric material overlying the surface region of the substrate;
• a first wiring structure overlying the first dielectric material;
• a first electrode material comprising a polycrystalline silicon material having a p+ impurity characteristic overlying the first wiring structure;
• a pillar structure formed at least in part from the first electrode material;
• a second dielectric material disposed about the pillar structure, wherein a top surface of the first electrode material is exposed;
• a resistive switching material comprising an amorphous silicon material overlying the top surface of the first electrode material;
• a second electrode material comprising an active metal material overlying the resistive switching material;
• a second wiring structure overlying the active metal material;
• and
• a blocking structure interposing and contacting the active metal material and the resistive switching material configured to inhibit formation of an active metal region of the active metal material within the resistive switching material in response to a temperature less than at least about 100 degrees Celsius.

A resistive memory device formed according to a method comprising:

• forming a first wiring structure overlying a first dielectric material and a substrate, wherein the substrate is selected from a group consisting of:
• monocrystalline silicon material, a silicon germanium material, and a silicon on insulator (SOI) substrate;
• forming a first electrode material comprising a silicon bearing material having a p-type impurity characteristic overlying the first wiring structure, wherein the silicon bearing material is selected from a group consisting of:
• p-type polysilicon, and a p-type silicon germanium alloy;
• forming a pillar structure from the first electrode material;
• forming a second dielectric material around the pillar structure, exposing a top surface of the first electrode material;
• forming a resistive switching material comprising a non-conductive amorphous silicon material in contact with the top surface of the first electrode material, wherein the non-conductive amorphous silicon material is not intentionally doped with impurities;
• forming an intermediary layer overlying and contacting the resistive switching material, wherein the intermediary layer comprises a material selected from a group consisting of:
• silicon oxide, silicon nitride, a high K dielectric material, and a low K dielectric material;
• forming an active metal material overlying and contacting the intermediary layer, wherein the active metal material is selected from a group consisting of:
• silver, gold, palladium, platinum, vanadium, aluminum, nickel, and chromium;
• and
• forming a second wiring structure overlying the active metal material.