Ge-Rich GST-212 phase change memory materials
AssigneesMacronix International Co., Ltd., International Business Machines Corporation
InventorsHuai-Yu Cheng, Hsiang-Lan Lung, Simone Raoux, Yen-Hao Shih, Matthew J. Breitwisch
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Abstract
A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.
Claims12
A phase change memory device comprising:
- a first electrode and second electrode;
- a body of phase change memory material between the first and second electrodes in a GST-212 family, wherein the bulk stoichiometry of the body of phase change memory material includes a Ge atomic concentration within a range from 30% to 65%, a Sb atomic concentration within a range from 13% to 27% and a Te atomic concentration within a range from 20% to 45%, and around the Ge—Sb2Te3 phase diagram tie line;
- and
- a controller which applies a set pulse having a duration of less than 100 nanoseconds to change the phase change material from an amorphous phase to a crystalline phase.
A phase change memory device comprising:
- a first electrode and second electrode;
- a body of phase change memory material between the first and second electrodes in a GST-212 family, wherein the bulk stoichiometry of the body of phase change memory material includes a Ge atomic concentration within a range from 40% to 65%, a Sb atomic concentration within a range from 13% to 27% and a Te atomic concentration within a range from 20% to 45%, and around the Ge—Sb2Te3 phase diagram tie line;
- and
- a controller which applies a set pulse having a duration of less than 100 nanoseconds to change the phase change material from an amorphous phase to a crystalline phase.
A method for manufacturing a phase change memory device, the method comprising:
- forming a first electrode;
- forming a body of phase change memory material in a GST-212 family, in contact with the first electrode wherein a Ge atomic concentration is within a range from 30% to 65%, a Sb atomic concentration is within a range from 13% to 27% and a Te atomic concentration is within a range from 20% to 45%, and around the Ge—Sb2Te3 phase diagram tie line;
- forming a second electrode in contact with the body of phase change memory material;
- and
- applying a set pulse having a duration of less than 100 nanoseconds to change the phase change material from an amorphous phase to a crystalline phase.
Dependencies are inferred from the claim text.