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US 8,946,665 B2Granted
Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSunil Shim, Wonseok Cho, Woonkyung Lee
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Abstract
A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.
Claims25
A semiconductor device, comprising:
- a plurality of horizontal electrodes vertically stacked on a substrate;
- a plurality of first insulating layers, each of which is disposed between a corresponding pair of the plurality of horizontal electrodes;
- a plurality of second insulating layers, each of which is disposed between a corresponding pair of the plurality of first insulating layers and is disposed at the same vertical level as a corresponding one of the plurality of horizontal electrodes;
- and
- a contact structure penetrating the first and second insulating layers,
- wherein the contact structure is in contact with the first insulating layers and the second insulating layers.
3 more elements
Dependencies are inferred from the claim text.