Solid-state imaging element and manufacturing method thereof, and electronic information device

A solid-state imaging element, in which light receiving sections for generating a signal charge by light irradiation are provided on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, and a plurality of unit pixel sections are disposed two dimensionally, each unit pixel section including a light receiving section and being provided with an electric charge transferring section, adjacent to the light receiving sections, for transferring a signal charge from the light receiving sections,

• wherein:
• the light receiving sections are formed in a square or rectangle in a plan view;
• an opposite conductivity type semiconductor region is disposed in between four unit pixel sections which are adjacent to one another and which have light receiving sections having a same conductivity, a conductivity of the opposite conductivity type semiconductor region being opposite of that of the light receiving sections of the four adjacent unit pixel sections, and
• a pixel separating electrode is disposed above the opposite conductivity type semiconductor region
• each of the four adjacent unit pixel sections is adjacent to two sides of light receiving sections, the two sides being sides that do not come in contact with the electric charge transferring section;
• and
• a given voltage is applied to the pixel separating electrode to allow a signal charge to be shared by the four adjacent unit pixel sections.