Method of manufacturing a semiconductor device formed using a substrate cutting method

A method of manufacturing a semiconductor device comprising the steps of:

• irradiating a substrate with laser light comprising a pulsed laser light at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate to form a modified spot within the substrate at the converging point;
• and
• performing the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut to form a plurality of non-overlapping modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots each having a modified region, the modified spots being formed intermittently and in alignment along each of the plurality of intersecting cutting lines, the modified spots are formed in the substrate only by the laser irradiation converging within the substrate;
• and
• cutting the substrate into parts along the plurality of intersecting cutting lines by growing cracks from the modified spots to grow towards a front and a back surface of the substrate,
• wherein the step of cutting the substrate into the parts along the plurality of intersecting cutting lines includes deforming a sheet supporting the substrate and applying stress to the substrate to cut and separate the substrate on the sheet into the parts, and the substrate is thereby cut in order to provide at least one manufactured semiconductor device.