Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device formed using a substrate cutting method, the manufacturing method comprising the steps of:

• irradiating a substrate with a laser light comprising a pulsed laser light at a converging point within the substrate, the irradiating step is performed at multiple locations in order to form a plurality of modified spots at converging points of the pulsed laser light along each of a plurality of intersecting cutting lines along which the substrate is to be cut in order to form a modified region made up of the modified spots which functions as a starting crack location for cutting the substrate, the modified spots have a pitch representing a distance between center points of adjacent modified spots along each of the plurality of intersecting cutting lines, the modified spots have a dimension in a direction along a respective cutting line, and the pitch of the modified spots is not less than the dimension of the modified spots in the direction along the respective cutting line;
• and
• cutting the substrate in order to provide at least one manufactured semiconductor device, wherein the cutting step comprises cutting the substrate at least along each of the plurality of intersecting cutting lines, the cutting being performed by cracks that are started from the modified spots and are not started from a front and a back surface of the substrate, and the cracks being grown towards the front and the back surface of the substrate.

A method of manufacturing a semiconductor device formed using a substrate cutting method, the manufacturing method comprising the steps of:

• irradiating a substrate with laser light comprising a pulsed laser light having a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate, the irradiating step is performed a multiple locations in order to form a plurality of modified spots at converging points of the pulsed laser light along each of a plurality of intersecting cutting lines along which the substrate is to be cut in order to form a modified region made up of the modified spots which functions as a starting crack location for cutting the substrate, the cutting being performed by cracks that are started from the modified spots and are not started from a front and a back surface of the substrate, and the cracks being grown towards the front and the back surface of the substrate;
• wherein the modified spots are intermittently formed along each of the plurality of intersecting cutting lines along which the substrate is to be cut within the object by making a pitch between adjacent modified spots measured along a respective cutting line in a cross section substantially perpendicular to a thickness direction of the substrate substantially equal to or larger than a size of a modified spot measured along the respective cutting line, in order to cut the substrate only with the modified region functioning as the starting crack location for cutting the substrate so that the substrate is cut in order to provide at least one manufactured semiconductor device.

A method of manufacturing a semiconductor device formed using a substrate cutting method, the manufacturing method comprising the steps of:

• irradiating a substrate with a laser light comprising a pulsed laser light at a converging point within the substrate, the irradiating step is performed at multiple locations in order to form a plurality of modified spots at converging points of the pulsed laser light along each of a plurality of intersecting cutting lines along which the substrate is to be cut in order to form a modified region made up of the modified spots which functions as a starting crack location for cutting the substrate, the modified spots have a pitch representing a distance between center points of adjacent modified spots along each of the plurality of intersecting cutting lines, the modified spots have a dimension in a direction along a respective cutting line, and the pitch of the modified spots is not less than the dimension of the modified spots in the direction along the respective cutting line;
• and
• cutting the substrate in order to provide at least one manufactured semiconductor device, the cutting step comprises cutting the substrate at least along each of a plurality of intersecting cutting lines, the cutting being performed by cracks that are started from the modified spots and are not started from a front and a back surface of the substrate, and the cracks being grown towards the front and the back surface of the substrate.