Photovoltaic device including flexible substrate or inflexible substrate and method for manufacturing the same
AssigneeIntellectual Discovery Co., Ltd.
InventorSeung-Yeop Myong
Life of this patent
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Abstract
Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
Claims8
A method for manufacturing an n-i-p type photovoltaic device including a first unit cell and a second unit cell on which light is incident, the method comprising:
- forming an n-type semiconductor layer of the first unit cell on a substrate;
- forming an intrinsic semiconductor layer of the first unit cell on the n-type semiconductor layer, the intrinsic semiconductor layer comprising a mixed phase hydrogenated microcrystalline silicon based material comprising an amorphous silicon based material and crystalline silicon grains;
- etching a surface of the intrinsic semiconductor layer to partially expose the silicon grains, such that the intrinsic semiconductor layer has a first surface that is textured by the exposed silicon grains and a non-textured opposing second surface;
- and
- forming a p-type semiconductor layer of the first unit cell on the intrinsic semiconductor layer,
- wherein an average crystal volume fraction of the intrinsic semiconductor layer of the first unit cell ranges from 25% to 75%.
Dependencies are inferred from the claim text.