Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer, forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and after formation of an insulating layer including hydrogen over the insulating layer including oxygen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
Claims56
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode;
- forming a first insulating layer over the gate electrode;
- forming an oxide semiconductor layer over the first insulating layer;
- and
- performing a first heat treatment after forming the oxide semiconductor layer;
- wherein the first heat treatment is performed first in an inert gas atmosphere and then in a gas comprising oxygen.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode;
- forming a first insulating layer over the gate electrode;
- forming an oxide semiconductor layer over the first insulating layer;
- and
- performing a first heat treatment after forming the oxide semiconductor layer;
- wherein the first heat treatment is performed first in an inert gas atmosphere and then in a gas comprising oxygen, and
- wherein the first heat treatment is a gas rapid thermal annealing process.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode;
- forming a first insulating layer over the gate electrode;
- forming an oxide semiconductor layer over the first insulating layer;
- and
- performing a first heat treatment after forming the oxide semiconductor layer;
- wherein the first heat treatment is performed first in an inert gas atmosphere and then in a gas comprising oxygen, and
- wherein the first heat treatment is performed at a temperature higher than or equal to 650° C. and lower than or equal to 700° C.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming an oxide semiconductor layer on an insulating surface;
- forming an oxide insulating film containing oxygen over the oxide semiconductor layer;
- after forming the oxide insulating film, performing a heat treatment to supply oxygen to the oxide semiconductor layer;
- and
- after performing the heat treatment, forming a first insulating film comprising silicon nitride over the oxide insulating film.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming an oxide semiconductor layer on an insulating surface;
- forming an oxide insulating film containing oxygen over the oxide semiconductor layer;
- after forming the oxide insulating film, performing a heat treatment to supply oxygen to the oxide semiconductor layer from the oxide insulating film;
- and
- after performing the heat treatment, forming a first insulating film comprising silicon nitride over the oxide insulating film.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating layer over the gate electrode;
- forming an oxide semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween;
- forming an oxide insulating film containing oxygen over the oxide semiconductor layer;
- after forming the oxide insulating film, performing a heat treatment to supply oxygen to the oxide semiconductor layer;
- and
- after performing the heat treatment, forming a first insulating film comprising silicon nitride over the oxide insulating film.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating layer over the gate electrode;
- forming an oxide semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween;
- forming an oxide insulating film containing oxygen over the oxide semiconductor layer;
- after forming the oxide insulating film, performing a heat treatment to supply oxygen to the oxide semiconductor layer from the oxide insulating film;
- and
- after performing the heat treatment, forming a first insulating film comprising silicon nitride over the oxide insulating film.
Dependencies are inferred from the claim text.