Group IV-B organometallic compound, and method for preparing same
AssigneeMecharonics Co., Ltd.
InventorsDae-jun Ahn, Hyun-chang Kim
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Abstract
The present invention relates to novel 4B group metalorganic compounds represented by following formula I and the preparation thereof. Specifically, the present invention relates to a thermally and chemically stable 4B group organo-metallic compound utilized in chemical vapor deposition (CVD) or atomic layer deposition (ALD), and the preparation thereof. A 4B group metalorganic compound prepared according to the present invention volatiles easily and is stable at high temperature, and can be used effectively in manufacturing 4B group metal oxide thin films. wherein M represents Ti, Zr or Hf, R1 represents C1˜C4 alkyl, R2 and R3 represent independently C1˜C6 alkyl.
Claims19
A method of semiconductor element deposition comprising the step of depositing onto a substrate a 4B group metalorganic compound represented by Formula I:
- Wherein,
- M represents Ti, Zr or Hf;
- R1 represents C1˜C4 alkyl;
- R2 and R3 represent independently C1˜C6 alkyl.
A process for preparing the 4B group metalorganic compound of the formula (I),
- wherein M represents Ti, Zr or Hf, R1 represents C1˜C4 alkyl, R2 and R3 represent independently C1˜C6 alkyl;
- characterized by reacting a compound of formula (IV)
- M′NR2R3 (IV)
- wherein R2 and R3 represent independently C1˜C6 alkyl and M′ represents Li, Na or K;
- with a metallic compound of formula (V)
- wherein M represents Ti, Zr or Hf, R1 represents C1˜C4 alkyl and X represents Cl, Br or I.
Dependencies are inferred from the claim text.