Method of forming interlayer dielectric film above metal gate of semiconductor device

A method of forming an interlayer dielectric film above a metal gate in a metal oxide semiconductor device, comprising:

• providing a silicon-containing compound having the formula:
• Six(A)y(B)z(C)m(D)n (I)
• wherein:
• x is in the range of from 1 to 9;
• y+z+m+n is in the range of from 4 to 20;
• and
• A, B, C, and D independently represent a functional group connecting with a silicon atom, the functional group is selected from a group consisting of alkyl, alkenyl, alkenyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO2, —CN, a hydrogen atom (—H), a halogen atom (—X) (selected from the group consisting of fluorine, chloride, bromine, and iodine), a hydroxyl group (—OH), and a metal atom (M) (selected from the group consisting of Li, Na, K, Be, Mg and Ca),
• when one of A, B, C and D is alkoxyl, at least two of A, B, C and D are different from each other,
• absent two or more groups selected from the group consisting of a hydrogen atom (—H), a halogen atom (—X), a hydroxyl group (—OH), and a metal atom (M);
• and
• providing a reactant to oxidize the silicon-containing compound.

A method of making a metal oxide semiconductor device, comprising:

• forming a metal gate above a semiconductor substrate;
• and
• forming at least one interlayer dielectric film above and contacting the metal gate using one or more precursors in vapor form, the one or more precursors comprising a silicon-containing compound having the formula:
• Six(A)y(B)z(C)m(D)n (I)
• wherein:
• x is in the range of from 1 to 9;
• y+z+m+n is in the range of from 4 to 20;
• and
• A, B, C, and D independently represent a functional group connecting with a silicon atom, the functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO2, —CN, a hydrogen atom (—H), a halogen atom (—X) (selected from the group consisting of fluorine, chloride, bromine, and iodine), a hydroxyl group (—OH), and a metal atom (M) (selected from the group consisting of Li, Na, K, Be, Mg and Ca),
• when one of A, B, C and D is alkoxyl, at least two of A, B, C and D are different from each other,
• absent two or more groups selected from the group consisting of a hydrogen atom (—H), a halogen atom (—X), a hydroxyl group (—OH), and a metal atom (M).