Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsYoshiro Hirose, Yushin Takasawa, Tsukasa Kamakura, Yoshinobu Nakamura, Ryota Sasajima
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Abstract
An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate.
Claims19
A method of manufacturing a semiconductor device, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) performing a set a predetermined number of times, the set including:
- (a-1) supplying a gas containing an element to the substrate;
- (a-2) supplying a carbon-containing gas to the substrate;
- and (a-3) supplying a nitrogen-containing gas to the substrate;
- and
- (b) supplying an oxygen-containing gas to the substrate,
- wherein the steps (a-1) through (a-3) are non-simultaneously performed, and the steps (a) and (b) are non-simultaneously performed.
A method of processing a substrate, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) performing a set a predetermined number of times, the set including:
- (a-1) supplying a gas containing an element to the substrate;
- (a-2) supplying a carbon-containing gas to the substrate;
- and (a-3) supplying a nitrogen-containing gas to the substrate;
- and
- (b) supplying an oxygen-containing gas to the substrate,
- wherein the steps (a-1) through (a-3) are non-simultaneously performed, and the steps (a) and (b) are non-simultaneously performed.
A method of manufacturing a semiconductor device, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) performing a set a predetermined number of times, the set including:
- (a-1) supplying a gas containing an element to the substrate;
- (a-2) supplying a carbon-containing gas to the substrate;
- (a-3) supplying the gas containing the element to the substrate;
- and (a-4) supplying a nitrogen-containing gas to the substrate;
- and
- (b) supplying an oxygen-containing gas to the substrate,
- wherein the steps (a-1) through (a-4) are non-simultaneously performed in order, and the steps (a) and (b) are non-simultaneously performed.
Dependencies are inferred from the claim text.