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US 8,946,083 B2Granted
In-situ formation of silicon and tantalum containing barrier
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Ting-Chun Wang, Szu-An Wu
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Abstract
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
Claims20
A method comprising:
- forming an opening in a dielectric layer;
- forming a silicon rich layer in the opening and contacting the dielectric layer;
- forming a tantalum-containing layer over and contacting the silicon rich layer;
- performing an annealing to react the tantalum-containing layer with the silicon rich layer to form a tantalum-and-silicon containing layer;
- after the annealing, filling the opening with a copper-containing metallic material, wherein at least two of steps among the forming the silicon rich layer, the forming the tantalum-containing layer, and the annealing are performed in a same vacuum environment, with no vacuum break occurring between the at least two of steps;
- and
- after the annealing, removing a portion of the tantalum-and-silicon containing layer from a bottom of the opening.
4 more elements
A method comprising:
- forming an opening having a sidewall in a dielectric layer;
- performing a treatment using a silicon-containing precursor to form a silicon rich layer on the sidewall of the opening;
- forming a tantalum-containing layer over and contacting the silicon rich layer;
- performing an annealing to react the tantalum-containing layer with the silicon rich layer to form a tantalum-and-silicon containing layer, wherein the steps of performing the treatment, forming the tantalum-containing layer, and the annealing are performed in a same vacuum environment, with no vacuum break occurring therebetween;
- after the step of annealing, removing a portion of the tantalum-and-silicon containing layer from a bottom of the opening;
- and
- filling a metallic material into the opening, wherein the metallic material comprises copper, and is filled after the annealing.
4 more elements
A method comprising:
- forming a low-k dielectric layer over a substrate;
- forming an opening having sidewalls in the low-k dielectric layer;
- forming a silicon rich layer on the sidewalls of the opening by treating the low-k dielectric layer with a silane containing precursor;
- forming a tantalum nitride layer over and contacting the silicon rich layer;
- performing an annealing to react the tantalum nitride layer with the silicon rich layer, so that a tantalum silicon nitride layer is formed, wherein the steps of treating, forming the tantalum nitride layer, and the annealing are in-situ performed with no vacuum break therebetween;
- after the step of annealing, removing a portion of the tantalum silicon nitride layer from a bottom of the opening;
- and
- after the step of annealing, filling a metallic material into the opening, wherein the metallic material comprises copper.
5 more elements
Dependencies are inferred from the claim text.