Method for cleaning semiconductor substrate
AssigneeInternational Business Machines Corporation
InventorsEmre Alptekin, Ahmet Serkan Ozcan, Viraj Yashawant Sardesai, Cung Do Tran
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Abstract
Embodiments of the invention include a method of cleaning a semiconductor substrate of a device structure and a method of forming a silicide layer on a semiconductor substrate of a device structure. Embodiments include steps of converting a top portion of the substrate into an oxide layer and removing the oxide layer to expose a contaminant-free surface of the substrate.
Claims18
A method of cleaning a semiconductor substrate associated with a device structure, comprising:
- converting a top portion of the semiconductor substrate into an oxide layer comprising implanting oxygen in the top portion of the semiconductor substrate using a gas cluster ion beam;
- and
- removing all of the oxide layer to expose a contaminate-free surface of the semiconductor substrate.
A method of forming a silicide layer on a semiconductor substrate associated with a device structure, the method comprising:
- converting a top portion of the semiconductor substrate into an oxide layer comprising implanting oxygen in the top portion of the semiconductor substrate using a gas cluster ion beam;
- removing all of the oxide layer to expose a contaminate-free surface of the semiconductor substrate;
- and
- forming a silicide layer on the contaminant-free surface of the semiconductor substrate.
Dependencies are inferred from the claim text.