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US 8,946,073 B2Granted
Phase change memory cell with large electrode contact area
AssigneeInternational Business Machines Corporation
InventorsMatthew J. BrightSky, Chung H. Lam, Jing Li, Alejandro G. Schrott, Norma E. Sosa Cortes
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Abstract
A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.
Claims10
A method for fabricating a phase change memory cell, the method comprising:
- forming a bottom electrode;
- depositing a first non-conductive layer above the bottom electrode;
- defining a first well in the first non-conductive layer that is positioned directly above the bottom electrode;
- lining a first electrically conductive liner along at least one wall of the first well such that the first electrically conductive liner partially fills the first well and is in electrical contact with the bottom electrode;
- depositing a phase change material in the first well such that the phase change material is in electrical contact with the first electrically conductive liner;
- and
- forming a top electrode;
- and
- wherein the first electrically conductive liner is in physical contact with both the bottom electrode and the top electrode;
- and
- wherein the phase change material is in physical contact with both the bottom electrode and the top electrode.
8 more elements
A method for fabricating a phase change memory cell, the method comprising:
- forming a bottom electrode;
- depositing a first non-conductive layer above the bottom electrode;
- defining a first well in the first non-conductive layer that is positioned directly above the bottom electrode;
- lining a first electrically conductive liner along at least one wall of the first well such that the first electrically conductive liner partially fills the first well and is in electrical contact with the bottom electrode;
- depositing a phase change material in the first well such that the phase change material is in electrical contact with the first electrically conductive liner;
- depositing a second non-conductive layer above the first non-conductive layer;
- defining a second well in the second non-conductive layer that is positioned directly above the first well;
- depositing the phase change material in the second well;
- forming a top electrode in the second well and in physical contact with the phase change material in the second well;
- and
- lining a second electrically conductive liner along the second well such that the second electrically conductive liner is in physical contact with the first electrically conductive liner.
8 more elements
Dependencies are inferred from the claim text.