Fabricating method of semiconductor device and semiconductor device fabricated using the same method

A fabricating method of a semiconductor device, comprising:

• providing a substrate having a first region and a second region;
• forming a plurality of first gates in the first region, such that the first gates are spaced apart at a first pitch;
• forming a plurality of second gates in the second region, such that the second gates are spaced apart at a second pitch different from the first pitch;
• implanting etch rate adjusting dopants in regions between the adjacent second gates, while blocking the first region;
• simultaneously etching the first region and the second region so as to form a first plurality of trenches in the first region and a second plurality of trenches in the second region, wherein a depth of the first plurality of trenches and a depth of the second plurality of trenches are substantially equal;
• and
• epitaxially growing a semiconductor material in the first and the second plurality of trenches.