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US 8,946,067 B2Granted
Method of making a thin crystalline semiconductor material
OwnerBing Huinventor
Life of this patent
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Abstract
A method of preparing a thin material layer from a semiconductor substrate is presented. The method entails forming a stress-generating epitaxial layer on a base substrate to form a stressed region, and achieving separation along the stressed region to produce a first part and a second part. The stress-generating epitaxial layer may be boron-doped or a Si(1-x)—Gex material. The separation may be achieved with spalling or etching.
Claims18
A method of preparing a semiconductor structure, comprising:
- forming a stress-generating epitaxial layer on a silicon or germanium base substrate to form a stressed region, wherein the stress-generating epitaxial layer is a boron-doped epitaxial layer;
- forming a second epitaxial layer on the stress-generating epitaxial layer;
- forming a third epitaxial layer on the second epitaxial layer, wherein the third epitaxial layer is boron-doped such that boron dopant concentration in the stress-generating epitaxial layer and the third epitaxial layer yields a resistivity that is ≦0.001 ohm-cm;
- forming a target epitaxial layer on the third epitaxial layer;
- and
- achieving separation along the stressed region to produce a first part and a second part.
3 more elements
Dependencies are inferred from the claim text.