Method of forming seed layer and method of forming silicon-containing thin film
AssigneeTokyo Electron Limited
InventorsMitsuhiro Okada, Akinobu Kakimoto, Kazuhide Hasebe
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Abstract
Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.
Claims21
A method of forming a silicon-containing thin film, the method comprising:
- forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas;
- forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer;
- and
- forming the silicon-containing thin film on the dual seed layer.
A method of forming a silicon-containing thin film, the method comprising:
- forming a mixed seed layer on a base, using both of an aminosilane-based gas and a higher-order silane-based gas having an order that is equal to or higher than the disilane, by
- adsorbing at least silicon included in the aminosilane-based gas on the base,
- filling sites, where at least the silicon included in the aminosilane-based gas is not adsorbed, with at least silicon included in the higher-order silane-based gas having an order that is equal to or higher than disilane, and
- depositing at least the silicon included in the higher-order silane-based gas having an order that is equal to or higher than the disilane on the base;
- and
- forming the silicon-containing thin film on the mixed seed layer.
Dependencies are inferred from the claim text.