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US 8,946,061 B2Granted
Engineering of porous coatings formed by ion-assisted direct deposition
AssigneeVarian Semiconductor Equiptment Associates, Inc.
InventorsBlake Darby, Ludovic Godet, Xianfeng Lu
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Abstract
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
Claims13
A method of producing a porous semiconductor film on a workpiece, comprising:
- generating semiconductor precursor ions comprising one or more of germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, the semiconductor precursor ions operative to form a porous film on the workpiece;
- and
- directing the semiconductor precursor ions to the workpiece over a range of angles, wherein the directing the semiconductor precursor ions comprises:
- providing a plasma sheath modifier that defines an aperture located between the plasma and workpiece;
- and
- attracting the semiconductor precursor ions to the workpiece through the aperture.
3 more elements
Dependencies are inferred from the claim text.