Methods of manufacturing strained semiconductor devices with facets
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Cheng, Chii-Horng Li, Tze-Liang Lee
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Abstract
A method for fabricating a semiconductor device, the method includes forming a gate stack over a major surface of a substrate. The method further includes recessing the substrate to form source and drain recess cavities adjacent to the gate stack in the substrate. The method further includes selectively growing a strained material in the source and drain recess cavities in the substrate using an LPCVD process, wherein the LPCVD process is performed at a temperature of about 660 to 700° C. and under a pressure of about 13 to 50 Torr, using SiH2Cl2, HCl, GeH4, B2H6, and H2 as reaction gases.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a gate stack over a major surface of a substrate;
- recessing the substrate to form source and drain recess cavities adjacent to the gate stack in the substrate;
- and
- selectively growing a strained material in the source and drain recess cavities in the substrate using a low-pressure chemical vapor deposition (LPCVD) process, wherein the LPCVD process is performed using SiH2Cl2, HCl, GeH4, B2H6, and H2 as reaction gases, wherein a ratio of a mass flow rate of the SiH2Cl2 to a mass flow rate of the GeH4 is in the range of from about 10 to 50, and the LPCVD process is performed at a temperature of from about 660 to 700° C. and under a pressure of from about 13 to 50 Torr.
A method for fabricating a semiconductor device, comprising:
- recessing the substrate to form source and drain recess cavities, wherein recessing the substrate comprises:
- dry etching the substrate using a biased dry etching process, and
- wet etching the dry etched substrate to form sidewalls of the source and drain recess cavities in a crystal plane of the substrate;
- and
- selectively growing a strained material in the source and drain recess cavities in the substrate using a low-pressure chemical vapor deposition (LPCVD) process, wherein the LPCVD process is performed using SiH2Cl2, HCl, GeH4, B2H6, and H2 as reaction gases, wherein a ratio of a mass flow rate of the SiH2Cl2 to a mass flow rate of the GeH4 is in the range of from about 10 to 50, and the LPCVD process is performed at a temperature of from about 660 to 700° C. and under a pressure of from about 13 to 50 Torr.
A method for fabricating a semiconductor device, comprising:
- recessing the substrate to form source and drain recess cavities, wherein recessing the substrate comprises:
- forming an upper portion having a first angle between a line parallel to a sidewall of the upper portion and a line parallel to a bottom surface of the at least one of the source and drain recess cavities, and
- forming a lower portion, wherein the upper portion is located closer to a top surface of the substrate than the lower portion, the lower portion having a second angle between a line parallel to a sidewall of the lower portion and the line parallel to the bottom surface of the at least one of the source and drain recess cavities, the second angle different from the first angle;
- and
- selectively growing a strained material in the source and drain recess cavities in the substrate using a low-pressure chemical vapor deposition (LPCVD) process, wherein the LPCVD process is performed at a temperature of from about 660 to 700° C. and under a pressure of from about 13 to 50 Torr, using SiH2Cl2, HCl, GeH4, B2H6, and H2 as reaction gases, wherein a ratio of a mass flow rate of the SiH2Cl2 to a mass flow rate of the GeH4 is in the range of from about 10 to 50.
Dependencies are inferred from the claim text.