Method and installation for producing a semiconductor device, and semiconductor device

A method of producing a semiconductor device comprising a substrate, a semiconductor layer, and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method comprising:

• positioning a substrate into a processing chamber having a sputtering target;
• forming the at least one metallization layer including an oxygen concentration gradient on the substrate by:
• forming a barrier/adhesion layer having a thickness of 2 nm to 30 nm by supplying an oxygen containing gas into the processing chamber and sputtering a first metallization material from the sputtering target onto the substrate;
• and
• sequentially forming a metal layer by terminating the supply of oxygen containing gas and sputtering a second metallization material from the sputtering target onto the substrate without removing the substrate from the processing chamber.