Crack control for substrate separation
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Cheng-Wei Cheng, Devendra K. Sadana, Katherine L. Saenger, Kuen-Ting Shiu
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Abstract
A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer. A stress inducing layer is formed on the device layer to assist in initiating a crack through the crack guiding layer and/or the interfaces. The device layer is removed from the substrate by propagating the crack.
Claims20
A method for separating a layer for transfer, comprising:
- forming a crack guiding layer on a surface of a substrate;
- forming a device layer on the crack guiding layer;
- weakening the crack guiding layer by exposing the crack guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer;
- forming a stress inducing layer on the device layer to assist in initiating a crack through the crack guiding layer and/or the interfaces;
- and
- removing the device layer from the substrate by propagating the crack.
A method for separating a layer for transfer, comprising:
- growing a crack guiding layer on a surface of a monocrystalline substrate;
- forming a device layer on the crack guiding crack guiding layer, the device layer including crystalline III-V material;
- etching the crack guiding layer at exposed portions at a periphery to form a recess crack that assists in crack formation;
- weakening the crack guiding layer by exposing the crack guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer;
- forming a stress inducing layer on the device layer to further assist in initiating a crack through the crack guiding layer and/or the interfaces;
- and
- removing the device layer from the substrate by propagating the crack.
A method for separating a layer for transfer, comprising:
- growing a crack guiding layer on a monocrystalline substrate, the crack guiding layer including AlAs;
- forming a device layer on the crack guiding layer;
- etching the crack guiding layer at exposed portions at a periphery to form a recess crack that assists in crack formation;
- weakening the crack guiding layer by exposing the crack guiding layer to an oxidation agent which reduces adherence at interfaces adjacent to the crack guiding layer;
- forming a stress inducing layer on the device layer to further assist in initiating a crack through the crack guiding layer and/or the interfaces;
- and
- removing the device layer from the substrate by propagating the crack.
Dependencies are inferred from the claim text.