Processes for multi-layer devices utilizing layer transfer

A method comprising:

• forming a donor device comprising a plurality of devices attached to a donor substrate, the plurality of devices made of a compound semiconductor material and positioned between a release layer formed over the donor substrate and a first dielectric layer formed over the plurality of devices;
• attaching the plurality of devices to a receiving device at room temperature, the receiving structure having a plurality of receiving devices made of a different material than the plurality devices and attached to a receiving substrate at a side opposite the plurality devices;
• etching the release layer to release the plurality of devices from the donor substrate, wherein the etchant selectively removes the release layer without substantially removing the first dielectric layer;
• applying a second dielectric layer over the plurality of devices and the receiving structure to cover any exposed surfaces of the plurality of devices and mechanically attach the plurality of devices to the receiving devices;
• attaching a handle substrate to the plurality devices;
• and
• removing the plurality of devices and the receiving structure from the receiving substrate.