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US 8,946,049 B2Granted
Replacement gate structures and methods of manufacturing
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement gate structures.
Claims17
A method, comprising:
- forming a continuous replacement gate structure within a trench formed in dielectric material;
- segmenting the continuous replacement gate structure into separate replacement gate structures;
- and
- forming insulator material between the separate replacement gate structures,
- wherein the forming the continuous replacement gate structure comprises:
- forming a continuous dummy gate structure;
- forming the dielectric material about the continuous dummy gate structure;
- removing the continuous dummy gate structure to form the trench;
- and
- depositing metal material within the trench.
7 more elements
A method, comprising:
- forming a continuous replacement gate structure within a trench formed in dielectric material:
- segmenting the continuous replacement gate structure into separate replacement gate structures;
- and
- forming insulator material between the separate replacement gate structures,
- wherein the insulator material is deposited as a liner, wherein the liner is deposited SiC—N, SiN or SiO2.
2 more elements
A method, comprising:
- forming a dummy gate material on a substrate having active regions and isolation regions;
- patterning the dummy gate material to form a plurality of continuous dummy gate strips, spanning over the active regions and the isolation regions;
- forming dielectric material about the continuous dummy gate strips;
- forming a plurality of trenches in the dielectric material by removing the dummy gate strips;
- forming continuous replacement gate structures within the plurality of trenches;
- segmenting the continuous replacement gate structures to form a plurality of segmented replacement gates, with an end to end spacing between the plurality of segmented replacement gates;
- and
- filling the end to end spacing with an insulator material.
5 more elements
Dependencies are inferred from the claim text.