Semiconductor device and method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTakayuki Iwaki, Takamasa Itou, Kana Shimizu
Life of this patent
Estimating the term…
Abstract
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.
Claims14
A method of manufacturing a semiconductor device, comprising:
- forming a transistor in a substrate;
- and
- forming a multilayer interconnect layer and a capacitive element located in said multilayer interconnect layer over said substrate and said transistor,
- wherein forming the capacitive element includes;
- forming a lower electrode including a metal;
- forming an amorphous metal-containing oxide layer over the surface of said lower electrode;
- annealing and crystallizing said metal-containing oxide layer;
- forming a dielectric film made of a metal oxide film over said metal-containing oxide layer;
- and
- annealing said dielectric film, and forming an upper electrode over said dielectric film.
A method of manufacturing a semiconductor device comprising:
- forming a transistor in a substrate;
- and
- forming a multilayer interconnect layer and a capacitive element located in said multilayer interconnect layer over said substrate and said transistor,
- wherein said step of forming the capacitive element includes:
- forming a lower electrode including a metal;
- processing the surface of said lower electrode using oxidizing plasma in a state where said substrate is maintained at a temperature of 100° C. or lower;
- annealing said lower electrode:
- forming a dielectric film made of a metal oxide film over said lower electrode;
- annealing said dielectric film, and forming an upper electrode over said dielectric film;
- and
- between forming the lower electrode and forming the dielectric film:
- forming a resist pattern over said lower electrode;
- and
- selectively removing said lower electrode using said resist pattern as a mask,
- wherein in forming the metal oxide film, said resist pattern is asked using said oxidizing plasma, and said metal film is formed.
Dependencies are inferred from the claim text.