SOI lateral bipolar transistor having multi-sided base contact and methods for making same
AssigneeInternational Business Machines Corporation
InventorsJin Cai, Tak H. Ning
Life of this patent
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Abstract
A Bipolar Junction Transistor with an intrinsic base, wherein the intrinsic base includes a top surface and two side walls orthogonal to the top surface, and a base contact electrically coupled to the side walls of the intrinsic base. In one embodiment an apparatus can include a plurality of Bipolar Junction Transistors, and a base contact electrically coupled to the side walls of the intrinsic bases of each BJT.
Claims11
A method for fabricating a bipolar junction transistor (BJT) with a small base resistance on a substrate with a semiconductor layer, the method comprising:
- patterning an active semiconductor region on the semiconductor layer, the active semiconductor region including an intrinsic base of the BJT, the intrinsic base including a top surface and two side walls substantially orthogonal to the top surface;
- forming a base contact that is electrically coupled to the side walls of the intrinsic base;
- forming a sacrificial gate over the intrinsic base before forming the base contact;
- forming a dielectric spacer about the sacrificial gate;
- selectively etching the sacrificial gate over the intrinsic base to create a channel, the top surface and the side walls of the intrinsic base being exposed at the channel;
- and
- wherein forming the base contact includes filling the channel with a base contact material.
A method for fabricating a bipolar junction transistor (BJT) with a small base resistance on a substrate with a semiconductor layer, the method comprising:
- patterning an active semiconductor region on the semiconductor layer, the active semiconductor region including an intrinsic base of the BJT, the intrinsic base including a top surface and two side walls substantially orthogonal to the top surface;
- and
- forming a base contact that is electrically coupled to the side walls of the intrinsic base;
- forming a sacrificial gate over the intrinsic base before forming the base contact;
- forming a dielectric spacer about the sacrificial gate;
- and
- implanting a dopant in the semiconductor layer to form a collector region and emitter region of the BJT, wherein the sacrificial gate acts as an implanting mask for the intrinsic base.
Dependencies are inferred from the claim text.