Diode structures using fin field effect transistor processing and method of forming the same

A diode comprising:

• a plurality of fins in an isolated fin area, at least one fin in the isolated fin area having a first dopant type;
• and
• a plurality of fin arrays in a fin array area, at least one fin in the fin array area having a second dopant type different from the first dopant type, wherein at least one fin array of the plurality of arrays is part of a fin field-effect transistor (FinFET) device;
• wherein an intra-array fin pitch in the fin array area is less than about 50 nanometers (nm).

A method of forming one or more diodes in a fin field-effect transistor (FinFET) device, the method comprising:

• forming an isolated fin area in a semiconductor substrate of the FinFET device;
• forming a fin array area, different from the isolated fin area, in the semiconductor substrate of the FinFET device, wherein an intra-array fin pitch in the fin array area is less than about 50 nanometers (nm);
• doping at least one fin in the isolated fin area with a first dopant type;
• and
• doping at least one fin in the fin array area with a second dopant type different from the first dopant type.