Method of forming dielectric films using a plurality of oxidation gases

A method of forming a high-k film, comprising:

• (a) exposing a substrate to multiple consecutive first gas pulses having an oxygen-containing gas in an atomic layer deposition (ALD) chamber, wherein a first one of the multiple consecutive first gas pulses is pulsed for a first time period and a second one of the multiple consecutive first gas pulses is pulsed for a second time period different from the first time period;
• (b) sequentially after step (a), exposing the substrate to a second gas pulse having a hydroxyl-containing gas in the ALD chamber, wherein the oxygen-containing gas is different from the hydroxyl-containing gas;
• and
• (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the ALD chamber.

A method of forming a semiconductor device, comprising:

• forming a gate dielectric over a substrate by atomic layer deposition (ALD);
• forming a gate electrode over the gate dielectric;
• and
• forming source and drain regions in the substrate adjacent sides of the gate electrode, respectively;
• wherein the forming the gate dielectric comprises:
• (a) exposing the substrate to a first gas pulse having a hydroxyl-containing gas in a chamber;
• (b) sequentially after step (a), exposing the substrate to multiple consecutive second gas pulses having an oxygen-containing gas in the chamber, wherein the hydroxyl-containing gas is different from the oxygen-containing gas, wherein a first one of the multiple consecutive second gas pulses has a different time than a second one of the multiple consecutive second gas pulses;
• and
• (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber.