US 8,946,032 B2 · Method of manufacturing power device

Abstract

A power device manufacturing method is provided. The power device manufacturing method may perform patterning of regions on which a source electrode and a drain electrode are to be formed, may regrow n+-gallium nitride (GaN) and p+-GaN in the patterned regions and thus, a thin film crystal may not be damaged. Also, a doping concentration of n+-GaN or p+-GaN may be adjusted, an ohmic resistance in the source electrode region and the drain electrode region may decrease, and a current density may increase. The power device manufacturing method may regrow n+-GaN and p+-GaN at a high temperature after an n-GaN layer and a p-GaN layer are patterned. Accordingly, a thin film crystal may not be damaged and thus, a reliability may be secured, and an annealing process may not be additionally performed and thus, a process may be simplified and a cost may be reduced.

Claims20

Dependent claims

A method of manufacturing a power device, the method comprising:

forming a buffer layer on a substrate;
forming a p-gallium nitride (GaN) layer on the buffer layer;
forming a first region and a second region by etching away the p-GaN layer in the first region and the second region:
forming an n+-GaN layer by regrowing GaN in the first region and the second region;
forming a source electrode and a drain electrode on the n+-GaN layer;
removing the substrate from a surface of the p-GaN layer following the forming of the source electrode and the drain electrode;
and
forming a bonding layer and disposing a thermal conductive substrate on the surface of the p-GaN layer from which the substrate is removed after the substrate is removed.

5 more elements

Dependencies are inferred from the claim text.

Method of manufacturing power device

Life of this patent

Method of manufacturing power device

Life of this patent

Abstract

Claims20