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US 8,946,024 B2Granted
Nonvolatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorNam-Jae Lee
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Abstract
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.
Claims6
A method for fabricating a nonvolatile memory device, comprising:
- forming a plurality of first conductive layer patterns over a semiconductor substrate such that the first conductive layer patterns are isolated from each other by a first trench and a second trench that are alternately provided between the plurality of first conductive layer patterns, wherein the second trench having a smaller width than the first trench;
- forming a first isolation layer to partially gap-fill the first trench and a second isolation layer gap-filling the second trench;
- forming a plurality of floating gates by etching the first conductive patterns;
- forming a dielectric layer over the entire surface of the resultant structure including the first and second isolation layers and the floating gates;
- forming a second conductive layer over the dielectric layer;
- and
- forming a control gate by etching the second conductive layer,
- wherein the plurality of floating gates have the same critical dimension, and spaces, which are alternately provided between the plurality of floating gates, have different critical dimension.
5 more elements
A method for fabricating a nonvolatile memory device, comprising:
- forming a plurality of first conductive layer patterns over a semiconductor substrate such that the first conductive layer patterns are isolated from each other by a first trench and a second trench that are alternately provided between the plurality of first conductive layer patterns, wherein the second trench having a smaller width than the first trench;
- forming a first isolation layer to partially gap-fill the first trench and a second isolation layer gap-filling the second trench;
- forming a plurality of floating gates by etching the first conductive patterns;
- forming a dielectric layer over the entire surface of the resultant structure including the first and second isolation layers and the floating gates;
- forming a second conductive layer over the dielectric layer;
- and
- forming a control gate by etching the second conductive layer,
- wherein the forming of the first isolation layer and the second isolation layer comprises:
- forming an insulator over the entire surface of the semiconductor substrate to gap-fill the first and second trenches;
- planarizing the insulator until upper surfaces of the first conductive layer patterns are exposed;
- forming a mask pattern to close the second trench;
- and
- recessing the insulator gap-filling the first trench by using the mask pattern as an etching barrier.
10 more elements
Dependencies are inferred from the claim text.