Method of forming controllably conductive oxide
AssigneeSpansion LLC
InventorsMatthew Buynoski, Seungmoo Choi, Chakravarthy Gopalan, Dongxiang Liao, Christie Marrian
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Abstract
In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.
Claims16
A method of fabricating a memory device comprising:
- providing a first electrode, wherein the first electrode is a single layer;
- providing an oxide on the first electrode, wherein the oxide directly touches the first electrode;
- implanting material in the oxide to form a layer comprising the oxide and the implanted material, wherein the oxide and implanted material layer comprises an overall oxygen deficiency and a resulting increase in conductivity as compared to the oxide before material implantation, wherein the increase in conductivity is proportional to an amount of material implanted in the oxide, and wherein the oxide and implanted material layer comprises all of the oxide;
- and
- providing a second electrode, wherein the second electrode overlays the oxide and implanted material layer.
A method of fabricating a memory device comprising:
- providing a first electrode, wherein the first electrode is a single layer;
- providing an oxide on the first electrode, wherein the oxide directly touches the first electrode;
- implanting material in the oxide to form a layer comprising the oxide and the implanted material, wherein the implanted material causes defects throughout the layer and a resulting increase in conductivity as compared to the oxide before material implantation, wherein the increase in conductivity is proportional to an amount of material implanted in the oxide, and wherein the oxide and implanted material layer comprises all of the oxide;
- and
- providing a second electrode, wherein the second electrode overlays the oxide and implanted material layer.
Dependencies are inferred from the claim text.